South Korean manufacturer SK hynix is developing High Bandwidth Storage technology that combines stacked DRAM and NAND chips to enhance artificial intelligence processing capabilities in mobile devices. The company employs vertical wire fan-out packaging to connect up to 16 memory layers in straight lines rather than curved configurations, reducing signal loss and transmission delays while enabling additional input-output connections.
The storage system will integrate directly with smartphone processors mounted on logic boards, with speculation suggesting Qualcomm's Snapdragon 8 Elite Gen 6 Pro could support the innovation alongside LPDDR6 memory and UFS 5.0 storage. Manufacturing costs remain lower than High Bandwidth Memory because the process eliminates Through Silicon Via chip penetration requirements, improving production yields.
Apple is reportedly exploring similar storage architectures to enable more sophisticated on-device AI model execution in future iPhones and tablets as generative artificial intelligence applications become standard features across consumer electronics.
The storage system will integrate directly with smartphone processors mounted on logic boards, with speculation suggesting Qualcomm's Snapdragon 8 Elite Gen 6 Pro could support the innovation alongside LPDDR6 memory and UFS 5.0 storage. Manufacturing costs remain lower than High Bandwidth Memory because the process eliminates Through Silicon Via chip penetration requirements, improving production yields.
Apple is reportedly exploring similar storage architectures to enable more sophisticated on-device AI model execution in future iPhones and tablets as generative artificial intelligence applications become standard features across consumer electronics.
