Semiconductor manufacturers will showcase breakthrough memory technologies at the upcoming Solid-State Circuits conference in San Francisco, with SK hynix demonstrating graphics memory capable of 48 gigabits per second transfer rates. The Korean chipmaker plans to reveal a 24-gigabit GDDR7 solution that would deliver 192 gigabytes per second bandwidth from individual modules, representing a substantial leap over current 28-gigabit configurations that manage just 112 gigabytes per second.
Samsung will counter with presentations on its 36-gigabyte HBM4 stacks engineered for artificial intelligence accelerators, achieving 3.3 terabytes per second throughput through 12-layer configurations destined for datacenter applications. Both manufacturers will also detail their LPDDR6 mobile memory advances, with SK hynix targeting 14.4 gigabits per second and Samsung achieving 12.8 gigabits per second on 16-gigabit dies manufactured using advanced one-alpha nanometer processes.
Samsung will counter with presentations on its 36-gigabyte HBM4 stacks engineered for artificial intelligence accelerators, achieving 3.3 terabytes per second throughput through 12-layer configurations destined for datacenter applications. Both manufacturers will also detail their LPDDR6 mobile memory advances, with SK hynix targeting 14.4 gigabits per second and Samsung achieving 12.8 gigabits per second on 16-gigabit dies manufactured using advanced one-alpha nanometer processes.
